BU113 Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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BU113

Inchange Semiconductor
BU113
BU113 BU113
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Part Number BU113
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Voltage- :VCEX(SUS) = 700V(Min.) ·Collector Current- IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in ho...
Features CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A ICEX Collector Cutoff Current VCE= 250V; VBE= -5V VCE= 700V; VBE= -5V hFE DC Current Gain IC= 8A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 4V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz tf Fall Time IC= 8A; IB1= -IB2= 1.6A BU113 MIN TYP. MAX UNIT 10 V 3.0 V 2.0 10 mA 7 6 MHz 250 pF 1.0 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification...

Document Datasheet BU113 Data Sheet
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