BU126 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

BU126

INCHANGE
BU126
BU126 BU126
zoom Click to view a larger image
Part Number BU126
Manufacturer INCHANGE
Description ·Collector-Emitter Sustaining Voltage- :VCEO(SUS) = 300V(Min.) ·Collector Current- IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo...
Features ECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 300 V V(BR)EBO Collector-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 10 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current hFE DC Current Gain IC= 4A; IB= 1A VCE= 750V; VBE= 0 VCE= 750V; VBE= 0; Ta= 125℃ IC= 1A; VCE= 15V 15 1.5 V 0.5 2.0 mA fT ...

Document Datasheet BU126 Data Sheet
PDF 200.18KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 BU120
Inchange Semiconductor
Silicon NPN Power Transistor Datasheet
2 BU120
Seme LAB
Bipolar NPN Device Datasheet
3 BU1206
Vishay Siliconix
Enhanced PowerBridge Rectifiers Datasheet
4 BU1206-E3
Vishay
Bridge Rectifiers Datasheet
5 BU1206-M3
Vishay
Bridge Rectifiers Datasheet
6 BU1208
Vishay Siliconix
Enhanced PowerBridge Rectifiers Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad