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BU120 Bipolar NPN Device


BU120
Part Number BU120
Distributor Stock Price Buy
Inchange Semiconductor
BU120
Part Number BU120
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·Collector-Emitter Sustaining Voltage- :VCEO(SUS) = 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial application. ABSOLUTE MA.
Features TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 2.5A ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VE.

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