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BU110 |
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| Part Number | BU110 |
| Manufacturer | INCHANGE |
| Description | ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150 V(Min) ·Minimum Lot-to-Lot variations for ... |
| Features |
s registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Base Cutoff Current
VCB=330V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 5A ; VCE= 1.5V
fT
Current Gain-Bandwidth Product
IC= 0.5A ; VCE= 10V
toff
Turn-Off Time
IC= 5A; IB= 0.5A
BU110
MIN MAX UNIT
1... |
| Document |
 BU110 Data Sheet
PDF 198.56KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BU111 |
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| 2 | BU112 |
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| 3 | BU113 |
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| 4 | BU114 |
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| 5 | BU118 |
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| 6 | BU11UA3WNVX-TL |
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Desde 2024. D4U Semiconductor.
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