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BU104 |
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| Part Number | BU104 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable... |
| Features |
d trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 7A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 250V; IE= 0
ICEX
Collector Cutoff Current
VCE= 400V; VBE= -5V
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 1.75V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
BU104
MIN TYP. MAX UNIT
150
... |
| Document |
 BU104 Data Sheet
PDF 207.87KB |
Similar Datasheet
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|---|---|---|---|---|
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Desde 2024. D4U Semiconductor.
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