BU104D INCHANGE NPN Transistor Datasheet. existencias, precio

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BU104D

INCHANGE
BU104D
BU104D BU104D
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Part Number BU104D
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable...
Features ER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1A ICBO Collector Cutoff Current VCB= 250V; IE= 0 ICEX Collector Cutoff Current VCE= 400V; VBE= -5V IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 5A; VCE= 1.75V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V BU104D MIN TYP. MAX UNIT 150 V 2.5 V 2.5 V 0.5 mA 1.0 mA 400 mA 7 50 10 MHz NOTICE: ISC reserves the rights to make changes of the content h...

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