BU105 Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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BU105

Inchange Semiconductor
BU105
BU105 BU105
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Part Number BU105
Manufacturer Inchange Semiconductor
Description ·High Voltage-VCER= 1300V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS...
Features stor BU105 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 750 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 1.5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 1.5A 1.5 V ICES Collector Cutoff Current VCE= 1300V; VBE= 0 1.0 mA hFE-1 DC Current Gain IC= 2A ; VCE= 5V 2 COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz 65 pF fT Current-Gain—Bandwidth...

Document Datasheet BU105 Data Sheet
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