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BU134 |
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| Part Number | BU134 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device perfor... |
| Features |
ERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 5V
ICES
Collector Cutoff Current
VCE= 400V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
tf
Fall Time
IC= 3A; IB1= -IB2= 0.6A
BU1... |
| Document |
 BU134 Data Sheet
PDF 206.99KB |
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Desde 2024. D4U Semiconductor.
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