| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
INCHANGE |
NPN Transistor 70 ℃/W BD645 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD645 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collect |
|
|
|
|
INCHANGE |
PNP Transistor & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD698 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltag |
|
|
|
|
INCHANGE |
PNP Transistor TERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA VBE(on) Base-Emitter On Voltage IC= -1.5A; |
|
|
|
|
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor tion to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD644 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. |
|
|
|
|
INCHANGE |
Silicon PNP Power Transistor EO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) |
|
|
|
|
INCHANGE |
Silicon NPN Power Transistor ctor-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(on) Base-Emitter |
|
|
|
|
INCHANGE |
NPN Transistor is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD643F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdow |
|
|
|
|
INCHANGE |
PNP Transistor unction to Ambient isc website：www.iscsemi.com 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD652 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. |
|
|
|
|
INCHANGE |
PNP Transistor on to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD646 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MA |
|
|
|
|
INCHANGE |
PNP Transistor tion to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD648 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. |
|
|
|
|
Inchange Semiconductor |
Silicon PNP Power Transistor EO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor ector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(on) Base-Emitte |
|
|
|
|
INCHANGE |
NPN Transistor mi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD651F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakd |
|
|
|
|
INCHANGE |
PNP Transistor to Ambient 6.3 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD650F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CO |
|
|
|
|
INCHANGE |
NPN Transistor is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD645F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; |
|
|
|
|
INCHANGE |
NPN Transistor i is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD647F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA |
|
|
|
|
INCHANGE |
NPN Transistor CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V I |
|
|
|
|
INCHANGE |
NPN Transistor CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V I |
|
|
|
|
INCHANGE |
NPN Transistor t 62.5 ℃/W BD649 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD649 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collec |
|
|
|
|
INCHANGE |
NPN Transistor wer Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 40mA VBE(on) Base-Em |
|
Desde 2024. D4U Semiconductor.
|