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BD636 |
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| Part Number | BD636 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Complement to Type BD635 ·Minimum Lot-to-Lot variations for robust device performance and r... |
| Features |
EO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -2V
ICES
Collector Cutoff Current
VCE= -60V; VBE= 0
hFE-1
DC Current Gain
IC= -25mA; VCE= -2V
hFE-2
DC Current Gain
IC= -1A; VCE= -2V
BD636
MIN MAX UNIT
-60
V
-60
V
-5
V
-0.6
V
-1.3
V
-0.2 mA
40
25
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at ... |
| Document |
 BD636 Data Sheet
PDF 191.29KB |
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Desde 2024. D4U Semiconductor.
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