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BD648 |
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| Part Number | BD648 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD647 ·Minimum Lot-to-Lot variations for robust d... |
| Features |
tion to Ambient
70
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
BD648
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
-80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -50mA
-2.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -12A; IB= -120mA
-3.0
V
VBE(on) Base-Emitter On Voltage
IC= -3A ... |
| Document |
 BD648 Data Sheet
PDF 189.95KB |
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Desde 2024. D4U Semiconductor.
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