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BD650F |
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| Part Number | BD650F |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD649F ·Minimum Lot-to-Lot variations for robust device performance and r... |
| Features |
to Ambient 6.3 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
BD650F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -3A ; VCE= -3V
ICBO
Collector Cutoff Cu... |
| Document |
 BD650F Data Sheet
PDF 210.43KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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