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BD645 |
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| Part Number | BD645 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD646 ·Minimum Lot-to-Lot variations for robust dev... |
| Features |
70
℃/W
BD645
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
BD645
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0 VCB= 40V; IE= 0; TC= 150℃
ICEO
Collector Cutoff Current
VCE= 30V; IB= ... |
| Document |
 BD645 Data Sheet
PDF 188.75KB |
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Desde 2024. D4U Semiconductor.
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