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BD643F |
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| Part Number | BD643F |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD644F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as compleme... |
| Features |
is registered trademark
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BD643F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
45
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA
2.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 50mA
3.0
V
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 3V
2.5
V
ICBO
Collector Cutoff Current
VCB= 45V;... |
| Document |
 BD643F Data Sheet
PDF 210.09KB |
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Desde 2024. D4U Semiconductor.
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