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BD675A |
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| Part Number | BD675A |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 45 V ·DC Current Gain— : hFE = 750(Min) @ IC= 2 A ·Complement to Type BD676A ·Minimum Lot-to-Lot variations for robust device performance and reliabl... |
| Features |
wer Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 40mA
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 45V; IB= 0
VCB= 45V; IE= 0 VCB= 45V; IE= 0;TC= 100℃
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 2 A ; VCE= 3V
BD675A
MIN MAX UNIT
45
V
2.8
V
2.5
V
0.5
mA
0.2 2.0
mA
2.0
mA
750
NOTICE： ISC reserves the r... |
| Document |
 BD675A Data Sheet
PDF 184.91KB |
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Desde 2024. D4U Semiconductor.
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