Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BD675 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD675 |
| Manufacturer | Savantic |
| Title | Silicon NPN Darligton Power Transistors |
| Description | ·With TO-126 package ·Complement to type BD676/678/680 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general–purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25. |
| Features | W VALUE 100 3.12 UNIT K/W K/W SavantIC Semiconductor Silicon NPN Darligton Power Transistors Product Specification BD675/BD677/BD679 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage BD675 BD677 IC=100mA; IB=0 BD679 V(BR)CBO Collector-base breakdown voltage BD675 BD677 IC=1mA; IE=0 BD679 V(BR)EBO Emitter-base br. |
| Part Number | BD675 |
| Manufacturer | CDIL |
| Title | NPN PLASTIC POWER DARLINGTON TRANSISTORS |
| Description | SYMBOL Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation@ Ta=25oC Derate above 25ºC Total Power Dissipation@ Tc=25oC Derate above 25ºC Operating & Storage Junction Temperature Range VCBO VCEO VEBO IC IB PD PD Tj,Tstg BD67. |
| Features | VCEO* ICEO ICBO IC =50mA, IB =0 BD675/BD675A BD677/BD677A BD679/BD679A BD681 BD683 VCE=half rated VCEO,IB=0 VCB =rated VCBO, IE=0 45 60 80 100 120 500 0.2 Emitter cut off Current ICBO IEBO VCB =rated VCBO, IE=0 TC=100OC VEB =5V, IC =0 2.0 2.0 BD675_683 Rev_2 101002E Continental Device India Limited Data Sheet UNITS V V V A A W mW/ ºC W W / ºC ºC ºC/W ºC/W UNITS V µA mA mΑ Page 1 of 4 N. |
| Part Number | BD675 |
| Manufacturer | Motorola Inc |
| Title | Silicon NPN Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD675/D Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD. |
| Features | ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Symbol VCEO VCB VEB IC IB BD675 BD675A 45 45 BD677 . |
| Part Number | BD675 |
| Manufacturer | ON Semiconductor |
| Title | NPN Silicon Transistor |
| Description | BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Mon. |
| Features |
• High DC Current Gain • Monolithic Construction • Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 • BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G VCEO Vdc 45 60 80 100 Collector−Base Vol. |
| Part Number | BD675 |
| Manufacturer | Comset Semiconductors |
| Title | Power Transistor |
| Description | NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD. |
| Features | 012 COMSET SEMICONDUCTORS 1 |3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD675/A - BD677/A - BD679/A - BD681/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= 60 V IE=0 , VCB= 80 V IE=0 , VCB= 100 V IE=0 , VCB= 120 V IE=0 ,VCB = 30V, Tj= 150°C IE=0 ,VCB = 40V, Tj= 150°C IE=0 ,VCB = 50V, Tj= 150°C IE=0 ,VCB = 60V, Tj= 150°C IB=0 . |
| Part Number | BD675 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package. / Features BD439 。 Complementary pair with BD439. / Applications 。 Medium power linear and switching applications. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications . |
| Features | BD439 。 Complementary pair with BD439. / Applications 。 Medium power linear and switching applications. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 BD675 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter. |
| Part Number | BD675 |
| Manufacturer | Central Semiconductor |
| Title | NPN SILICON POWER DARLINGTON TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in the plastic TO-126 package, and are designed for audio and video output applications. MARKING: FULL PART NUMBER TO-126 CASE BD675 MAXIMUM RATINGS: (TC=25°C) SYMBOL BD675A Collector-Base Volta. |
| Features | IC=50mA (BD679, BD679A) 80 BVCEO IC=50mA (BD681) 100 BVCEO IC=50mA (BD683) 120 VCE(SAT) IC=1.5A, IB=30mA (Non-A) VCE(SAT) IC=2.0A, IB=40mA (A) VBE(ON) VCE=3.0V, IC=1.5A (Non-A) VBE(ON) VCE=3.0V, IC=2.0A (A) hFE VCE=3.0V, IC=1.5A (Non-A) 750 hFE VCE=3.0V, IC=2.0A (A) 750 hfe VCE=3.0V, IC=1.5A, f=1.0MHz 1.0 MAX 200 2.0 500 2.0 2.5 2.8 2.5 2.5 BD683 120 120 UNITS V V V A mA W °. |
| Part Number | BD675 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 45 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD676 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose ampli. |
| Features | ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 45V; IB= 0 VCB= 45V; IE= 0 VCB= 45V; IE= 0;TC= 100℃. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD67 |
ON Semiconductor |
DARLINGTON POWER TRANSISTORS NPN SILICON |
|
| 2 | BD670 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
|
| 3 | BD6701F |
Rohm |
Two-phase Full-wave DC Brushless Fan Motor Drivers |
|
| 4 | BD6709FS |
Rohm |
DC Brushless Fan Motor Drivers |
|
| 5 | BD6712AF |
Rohm |
2-Phase Half-Wave Pre Driver |
|
| 6 | BD6713EFV |
Rohm |
Single-Phase Full-Wave Motor Pre-Driver |
|
| 7 | BD67173NUX |
Rohm |
Three-Phase Full-Wave Fan Motor Driver |
|
| 8 | BD6718FV |
Rohm |
DC Brushless Fan Motor Drivers |
|
| 9 | BD6721FS |
Rohm |
Multifunction Single-phase Full-wave Fan Motor Driver |
|
| 10 | BD6722FS |
Rohm |
Multifunction Single-phase Full-wave Fan Motor Driver |
|
Desde 2024. D4U Semiconductor.
|