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BD637 |
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| Part Number | BD637 |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·Complement to Type BD638 ·Minimum Lot-to-Lot variations for robust device performance and rel... |
| Features |
ector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 2V
ICES
Collector Cutoff Current
VCE= 100V; VBE= 0
hFE-1
DC Current Gain
IC= 25mA; VCE= 2V
hFE-2
DC Current Gain
IC= 1A; VCE= 2V
BD637
MIN MAX UNIT
80
V
100
V
5
V
0.6
V
1.3
V
0.2
mA
40
25
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notif... |
| Document |
 BD637 Data Sheet
PDF 189.23KB |
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Desde 2024. D4U Semiconductor.
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