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BD645F |
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| Part Number | BD645F |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD646F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as compleme... |
| Features |
is registered trademark
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BD645F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0 VCB= 40V; IE= 0; TC= 150℃
ICEO
Collector Cutoff C... |
| Document |
 BD645F Data Sheet
PDF 209.88KB |
Similar Datasheet
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| 1 | BD645 |
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Desde 2024. D4U Semiconductor.
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