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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching mode power supplies ·General purpose power amp |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·Ease of paralleling ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applicati |
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INCHANGE |
TO-220F N-Channel MOSFET Transistor L CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N06 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Fully Avalanche Rated ·ABSOLUTE MAXIMUM RATI |
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INCHANGE |
N-Channel MOSFET L CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=60A ;VGS= 0 RDS(on) Drain-Source On-Resistan |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤40mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fully Characterized Avalanche Voltage a |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N05 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VDSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 50 V VGS(th) Gate Thresho |
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INCHANGE |
N-Channel MOSFET ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY |
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INCHANGE |
N-Channel MOSFET ET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N06-18 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VSD Diode Forward On-Vo |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode |
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INCHANGE |
N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply · |
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INCHANGE |
Diode Rectifier ·Reduced RFI and EMI ·Reduced Snubbing ·Extensive Characterization of Recovery Parameters ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·These devices are ideally suited for power converters, motors |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Inchange |
N-Channel MOSFET Transistor ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.016Ω(Max) ·Fast Switching DESCRIPTION Suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom a |
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INCHANGE |
N-Channel MOSFET ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
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INCHANGE |
N-Channel MOSFET ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Solenold and relay dirvers ·DC-DC converters ·Automotive environment ·ABSOLUT |
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INCHANGE |
N-Channel MOSFET ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor STP26NM60N ·A |
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INCHANGE |
N-Channel MOSFET stered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N05-16 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= V |
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Desde 2024. D4U Semiconductor.
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