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60N06 |
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| Part Number | 60N06 |
| Manufacturer | INCHANGE |
| Description | ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPL... |
| Features |
L CHARACTERISTICS (TC=25℃)
INCHANGE Semiconductor
60N06
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=30A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
VSD
Diode Forward On-Voltage
IS=60A ;VGS= 0
MIN TYPE MAX UNIT
60
V
2.0
4.0
V
18
mΩ
±100 nA
1
µA
1.6
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T... |
| Document |
 60N06 Data Sheet
PDF 235.96KB |
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