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STF13NM60N |
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| Part Number | STF13NM60N |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STF13NM60N ·FEATURES ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations fo... |
| Features |
·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 11 6.93 44 PD Total Dissipation 25 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt... |
| Document |
 STF13NM60N Data Sheet
PDF 196.44KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STF13NM60N |
ST Microelectronics |
N-channel MOSFET |
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| 2 | STF13NM60N-H |
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| 3 | STF13NM60ND |
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| 4 | STF13NM50N |
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| 5 | STF13N60DM2 |
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| 6 | STF13N60M2 |
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Desde 2024. D4U Semiconductor.
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