60N06-18 |
Part Number | 60N06-18 |
Manufacturer | INCHANGE |
Description | ·High current capability ·Avalanche rugged technology ·Low gate charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Regulat... |
Features |
ET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N06-18 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VSD Diode Forward On-Voltage IS=60A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time VGS=10V; ID=60A; VDD=30V; RG=2.5Ω MIN TYPE MAX UNIT 60 V 2.0 4.0 V 1.6... |
Document |
60N06-18 Data Sheet
PDF 226.04KB |
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