60N06-18 INCHANGE N-Channel MOSFET Datasheet. existencias, precio

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60N06-18

INCHANGE
60N06-18
60N06-18 60N06-18
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Part Number 60N06-18
Manufacturer INCHANGE
Description ·High current capability ·Avalanche rugged technology ·Low gate charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Regulat...
Features ET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N06-18 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VSD Diode Forward On-Voltage IS=60A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time VGS=10V; ID=60A; VDD=30V; RG=2.5Ω MIN TYPE MAX UNIT 60 V 2.0 4.0 V 1.6...

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