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| Part Number | 60N06 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 60N06 |
| Manufacturer | INCHANGE |
| Title | TO-220F N-Channel MOSFET Transistor |
| Description | ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier High current,high speed switching Solenoid and relay drive. |
| Features | L CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N06 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 VSD Diode Forward On-Voltage IS=60A. |
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Desde 2024. D4U Semiconductor.
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