FCPF11N60NT |
Part Number | FCPF11N60NT |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v... |
Features |
·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 10.8 Tc=100℃ 6.8 A IDM Drain Current-Single Pulsed 32.4 A PD Total Dissipation 32.1 W Tj Operating Junction Temperature -55~150 ℃ Tstg ... |
Document |
FCPF11N60NT Data Sheet
PDF 244.59KB |
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