Busque con el número de pieza junto con el fabricante o la descripción
60N06-14 |
Click to view a larger image
| Part Number | 60N06-14 |
| Manufacturer | INCHANGE |
| Description | ·High current capability ·Avalanche rugged technology ·Low gate charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Regulat... |
| Features |
L CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS=60A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=30A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
60N06-14
MIN TYPE MAX UNIT
60
V
2.0
4.0
V
1.6
V
14
mΩ
±100 nA
250
µA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information con... |
| Document |
 60N06-14 Data Sheet
PDF 222.41KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|