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60N05-16 |
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| Part Number | 60N05-16 |
| Manufacturer | INCHANGE |
| Description | ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPL... |
| Features |
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isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N05-16 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=60A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current tr Rise Time td(on) Turn-on Delay Time VDS= 60V; VGS= 0 VGS=10V;ID=30A; VDD=30V;RG=50Ω MIN TYPE MAX UNIT 50 V 2.0 4.0 V 1.6 V 16 mΩ... |
| Document |
 60N05-16 Data Sheet
PDF 225.86KB |
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