Busque con el número de pieza junto con el fabricante o la descripción
60N10 |
Click to view a larger image
| Part Number | 60N10 |
| Manufacturer | Inchange Semiconductor |
| Description | isc N-Channel Mosfet Transistor INCHANGE Semiconductor 60N10 ·FEATURES ·Drain Current ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations fo... |
| Features |
·Drain Current ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching mode power supplies ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 60 A ID(puls) Pulse Drain Current 180 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature... |
| Document |
 60N10 Data Sheet
PDF 234.59KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|