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IRFB260N |
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| Part Number | IRFB260N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IRFB260N，IIRFB260N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤40mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot varia... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤40mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fully Characterized Avalanche Voltage and Current ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 56 IDM Drain Current-Single Pulsed 220 PD Total Dissipation @TC=25℃ 380 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·T... |
| Document |
 IRFB260N Data Sheet
PDF 241.11KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFB260 |
International Rectifier |
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| 2 | IRFB260N |
International Rectifier |
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| 3 | IRFB260NPBF |
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| 4 | IRFB20N50K |
Vishay |
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| 5 | IRFB20N50K |
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| 6 | IRFB20N50KPBF |
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Desde 2024. D4U Semiconductor.
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