| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A • Low Gate Charge (Typ. 4.5 nC) • Low Crss (Typ. 3.7 pF) • 100% Avalanche Tested Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply April 2013 Description UniFETTM MOSFET is Fairchil |
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Fairchild Semiconductor |
MOSFET General Description Shielded Gate MOSFET Technology Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A • RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A • Low Gate Charge (Typ. 2.9 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Desc |
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Fairchild Semiconductor |
MOSFET Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A Very low Qg and Qgd compared to competing trench technologies August 2011 General Description This N-Channel MOSFET is produced using Fairchild Sem |
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Fairchild Semiconductor |
100V N-Channel PowerTrench MOSFET • 3.7 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V • Fast switching speed • Low gate charge (14nC typ) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely use |
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Fairchild Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 60 A • High Input Impedance • Fast Switching • RoHS Compliant • Qualified to Automotive Requirements of AEC-Q101 Applications • Automotive chargers, Converters, High Voltage |
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Fairchild Semiconductor |
N-Channel PowerTrench MOSFET General Description Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surfac |
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Fairchild Semiconductor |
MOSFET Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL Test |
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Fairchild Semiconductor |
MOSFET General Description January 2013 Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a wi |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surf |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface |
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Fairchild Semiconductor |
P-Channel MOSFET • –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V. • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) . • High power and current handling capability in a widely used surfac |
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Fairchild Semiconductor |
N-Channel MOSFET 6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V Fast switching speed. High power and current handling capabitlity in a widely used surface mount package. Applications DC/DC converter Load switch Motor driving |
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Fairchild Semiconductor |
N-Channel MOSFET 5 A, 30 V. RDS(ON) = 0.06 Ω @ VGS = 10 V RDS(ON) = 0.090 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 |
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Fairchild Semiconductor |
30V P-Channel MOSFET • 3.4 A, –30 V. RDS(ON) = 130 mΩ @ V GS = 10 V RDS(ON) = 200 mΩ @ V GS = 4.5 V • Fast switching speed • Low gate charge (2.5 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a |
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Fairchild Semiconductor |
N-Channel MOSFET 6.5 A, 30 V. RDS(ON) = 0.035Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM |
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Fairchild Semiconductor |
N-Channel Logic Level PowerTrench MOSFET • rDS(ON) = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Qg(tot) = 2.36nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode Applications • Servo Motor Load Control • DC-DC converters DRAIN (FLANGE) D GATE DRAIN SOURCE G D S SOT-223 MOSFET Max |
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Fairchild Semiconductor |
20A Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20A • High Input Impedance • Fast Switching • RoHS Compliant • Qualified to Automotive Requirements of AEC-Q101 Applications • Automotive chargers, Converters, High Voltage A |
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Desde 2024. D4U Semiconductor.
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