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FDT86246 |
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| Part Number | FDT86246 |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely low rDS(on) High power and current handling capabil... |
| Features |
General Description
Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package Fast switching speed 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
Load Switch Primary Switch
D
SOT-223
S D G
D GDS
MOSFET Maximum Ratings TA = 25 °C ... |
| Document |
 FDT86246 Data Sheet
PDF 235.41KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDT86244 |
Fairchild Semiconductor |
MOSFET |
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| 2 | FDT86244 |
ON Semiconductor |
N-Channel MOSFET |
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| 3 | FDT86244 |
Kexin |
N-Channel Enhancement MOSFET |
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| 4 | FDT86246 |
ON Semiconductor |
N-Channel MOSFET |
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| 5 | FDT86246L |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
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| 6 | FDT86246L |
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N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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