FDT86113LZ |
Part Number | FDT86113LZ |
Manufacturer | Fairchild Semiconductor |
Description | Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling cap... |
Features |
General Description
Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
HBM ESD protection level > 3 KV typical (Note 4)
100% UIL tested
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance... |
Document |
FDT86113LZ Data Sheet
PDF 225.38KB |
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