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| Part Number | FDT86106LZ |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FDT86106LZ |
| Manufacturer | Fairchild Semiconductor |
| Title | MOSFET |
| Description | January 2013 Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package HBM ESD protection level > 3 KV typic. |
| Features | General Description January 2013 Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package HBM ESD protection level > 3 KV typical (Note 4) 100% UIL tested This N-Channel logic Level MOSFETs are produced . |
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Desde 2024. D4U Semiconductor.
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