FDT86106LZ |
Part Number | FDT86106LZ |
Manufacturer | Fairchild Semiconductor |
Description | January 2013 Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and curren... |
Features |
General Description
January 2013
Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
HBM ESD protection level > 3 KV typical (Note 4)
100% UIL tested
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been ad... |
Document |
FDT86106LZ Data Sheet
PDF 350.64KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDT86106LZ |
ON Semiconductor |
N-Channel MOSFET | |
2 | FDT86102LZ |
Fairchild Semiconductor |
MOSFET | |
3 | FDT86102LZ |
ON Semiconductor |
N-Channel MOSFET | |
4 | FDT86113LZ |
Fairchild Semiconductor |
MOSFET | |
5 | FDT86113LZ |
ON Semiconductor |
N-Channel MOSFET | |
6 | FDT86244 |
Fairchild Semiconductor |
MOSFET |