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FDT86244 |
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| Part Number | FDT86244 |
| Manufacturer | Fairchild Semiconductor |
| Description | Shielded Gate MOSFET Technology Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A High Performance Trench Technology for Extremely Low rDS(on) Hig... |
| Features |
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A High Performance Trench Technology for Extremely Low
rDS(on) High Power and Current Handling Capability in a Widely Used
Surface Mount Package Fast Switching Speed 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Applications
Loa... |
| Document |
 FDT86244 Data Sheet
PDF 228.24KB |
Similar Datasheet
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| 1 | FDT86244 |
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Desde 2024. D4U Semiconductor.
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