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FDT86256 |
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| Part Number | FDT86256 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has ... |
| Features |
Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
Very low Qg and Qgd compared to competing trench technologies
August 2011
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Fast switching speed 100% UIL Tested RoHS Compliant
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
D
SOT-223
S D G
D GDS
MOSFET ... |
| Document |
 FDT86256 Data Sheet
PDF 246.36KB |
Similar Datasheet
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