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FDT459N |
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| Part Number | FDT459N |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to... |
| Features |
6.5 A, 30 V. RDS(ON) = 0.035Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage
TA = 25oC unless otherwise noted FDT459N 30 ±20
(Note 1a)
Units V V A
Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c)
6.5 20 3 1.3 1.... |
| Document |
 FDT459N Data Sheet
PDF 89.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDT457N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDT457N |
ON Semiconductor |
N-Channel MOSFET |
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| 3 | FDT458P |
Fairchild Semiconductor |
30V P-Channel MOSFET |
|
| 4 | FDT434P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 5 | FDT434P |
ON Semiconductor |
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|
| 6 | FDT439N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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