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| Part Number | FDT457N |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FDT457N |
| Manufacturer | ON Semiconductor |
| Title | N-Channel MOSFET |
| Description | These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance, provide superior switching performance. These products are well suited t. |
| Features |
• 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V • High Density Cell Design for Extremely Low RDS(ON) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • This Device is Pb−Free ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 30 V VGSS Gate−Source Voltage − Continuo. |
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Desde 2024. D4U Semiconductor.
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