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FDT457N |
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| Part Number | FDT457N |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mi... |
| Features |
• 5 A, 30 V RDS(on) = 0.06 W @ VGS = 10 V RDS(on) = 0.090 W @ VGS = 4.5 V • High Density Cell Design for Extremely Low RDS(ON) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • This Device is Pb−Free ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 30 V VGSS Gate−Source Voltage − Continuous ±20 V ID Maximum − Continuous (Note 1a) 5 A Drain Current − Pulsed 16 PD Maximum Power Dissipation (Note 1a) 3 W (Note 1b) 1.3 (Note 1c) 1.1 TJ, Tstg Operating and Storage Tem... |
| Document |
 FDT457N Data Sheet
PDF 198.81KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FDT457N |
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N-Channel MOSFET |
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| 2 | FDT458P |
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| 3 | FDT459N |
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| 4 | FDT434P |
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| 5 | FDT434P |
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| 6 | FDT439N |
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Desde 2024. D4U Semiconductor.
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