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FDT86102LZ |
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| Part Number | FDT86102LZ |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has ... |
| Features |
Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench technologies
Fast switching speed
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
... |
| Document |
 FDT86102LZ Data Sheet
PDF 261.83KB |
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Desde 2024. D4U Semiconductor.
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