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FDT86246L |
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| Part Number | FDT86246L |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A High performance trench technology for extremely low rDS(on) High power and current handling capab... |
| Features |
General Description
Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package Fast switching speed 100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
Load Switch Primary Switch Buck/Boost Switch
D D
SOT-223
S
D G
GDS
MOSFET Maximu... |
| Document |
 FDT86246L Data Sheet
PDF 299.33KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDT86246 |
Fairchild Semiconductor |
MOSFET |
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| 2 | FDT86246 |
ON Semiconductor |
N-Channel MOSFET |
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| 3 | FDT86246L |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDT86244 |
Fairchild Semiconductor |
MOSFET |
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| 5 | FDT86244 |
ON Semiconductor |
N-Channel MOSFET |
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| 6 | FDT86244 |
Kexin |
N-Channel Enhancement MOSFET |
|
Desde 2024. D4U Semiconductor.
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