Weitron Technology 2SB Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SB834	Weitron Technology	PNP Silicon Epitaxial Power Transistor * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚C ABSOLUTE MAXIMUM RATINGS
2	2SB1260	Weitron Technology	PNP Plastic-Encapsulate Transistor rwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC=-0.1 Adc, VCE=-3.0 Vdc) Collector-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc) Transition Frequency (IC=-50 mAdc, VCE=-5.0 Vdc,f=30 MHz
3	2SB1132	Weitron Technology	PNP Plastic-Encapsulate Transistors ERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE= -3 Vdc) Collector-Emitter Saturation Voltage (IC= -500 mAdc, I B = -50mAdc) Transition Frequency (
4	2SB1386	Weitron Technology	Epitaxial Planar Transistor Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw 2SB1386 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC = -0.5 Adc, VCE = -2.0 Vd
5	2SB1424	Weitron Technology	Epitaxial Planar PNP Transistors Unit Parameter Symbol Conditions DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance CLASSIFICATION OF hFE Marking Rank Range AEQ Q 120-270 VCE(sat) h FE fT Cob 120 - 240 35 -0.5 390 - V - Ic
6	2SB1188	Weitron Technology	Epitaxial Planar PNP Transistors Unit V MHz DC Current Gain (VCE=-3V, Ic=-0.5A) Collector-Emitter Saturation Voltage (Ic=-2A, IB =-0.2A) Transition Frequency (vCE=-5v, Ic=0.5A, f=30MHz) Output Capacitancen (VCB =-10V, I E =0A, f=1MHz) h FE VCE(sat) fT Cob 82 80 - - pF CLASSIF
7	2SB1412	Weitron Technology	PNP Transistor * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector
8	2SB649A	Weitron Technology	PNP Transistor VCE = -5.0V, IC = -150mA VCE = -5.0V, IC = -500mA Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA Base-Emitter Voltage VCE = -5.0V, I C = -150mA Transition frequency VCE = -5.0V, I C = -150mA Collecotr Output Capacitance VCB = -10V, I E
9	2SB649	Weitron Technology	PNP Transistor VCE = -5.0V, IC = -150mA VCE = -5.0V, IC = -500mA Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA Base-Emitter Voltage VCE = -5.0V, I C = -150mA Transition frequency VCE = -5.0V, I C = -150mA Collecotr Output Capacitance VCB = -10V, I E
10	2SB1197K	Weitron Technology	PNP Transistor