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Toshiba |
Silicon NPN Transistor |
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Toshiba |
Silicon NPN Transistor . Low Leakage Current : ICEV=50nA(Max.), I BEV =-50nA(Max. @ V C E=30V, VB E=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance : C ob=4pF(Max.) @ V C B=5V . C |
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Toshiba |
GENERAL PURPOSE POWER TRANSISTOR . High Gain at High Current . Low Saturation Voltage : VcE(sat)=0. 8V @ IC=5A, IB=0.5A . Excellent Area of Safe Operatings Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Col |
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Toshiba |
GENERAL PURPOSE POWER TRANSISTOR . High Gain at High Current . Low Saturation Voltage : VcE(sat)=0. 8V (Max.) @ IC=5A, IB=0.5A . Excellent Area of Safe Operatings Unit in mm 025.OMAX, *21.0 MAX oc5. g^, i.o+—aaoo94 , 30.2±0.2 c5c5 +1 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Co |
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Toshiba |
Silicon NPN Transistor . Low Leakage Current : ICEV=50nA(Max.), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V C E(sat)=0.3V(Max.) @ I c=50mA, lB=5mA . Low Collector Output Capacitance : C b=4pF(Max.) @ V C B=5V . Co |
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Toshiba |
SILICON PNP Transistor . High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, Ic=-3A Low Saturation Voltage: VCE(sat)=-1.0V (Max.) @ IC=-5A, I B=-0.5A Unit in irnn MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO |
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Toshiba |
SILICON PNP Transistor . High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, I C=-3A . Low Saturation Voltage: VcE(sat)=-1.0V (Max.) @ IC=-5A, Ib=-0.5A Unit in mm 025.OUAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Vol |
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Toshiba |
Silicon PNP Transistor . High Gain and Excellent hFE Linearity: hFE=15(Min.) @ VC E=-2V, Ic=-3A Low Saturation Voltage: VcE(sat)=-1.0V(Max.) @ I C=-4A, Ib=-0.4A Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emi |
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Toshiba |
GENERAL PURPOSE POWER TRANSISTOR . High Gain at High Current . Low Saturation Voltage: VcE(sat)=l-OV (Max.) @ IC=5A, I B=0.5A . Excellent Area of Safe Operatings MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector |
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Toshiba |
GENERAL PURPOSE POWER TRANSISTOR . High Gain at High Current . Low Saturation Voltage : VcE(sat) =1 - ov (Max.) @ IC=5A, Ib=0.5A . Excellent Area of Safe Operatings MAXIMUM RATINGS ( •Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Coll |
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Toshiba |
Silicon PNP Transistor . Low Leakage Current : ICEV= -50nA(Max.), T-BEV= 50nA(Max. @ V C E=-30V, Vbe=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V CE ( sat) =-0.4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ |
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Toshiba |
SILICON PNP Transistor . High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max.) @ Ic=-4A, I B=-0.4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC a Collector-Base Voltage * • Collector-Emitter Vol |
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Toshiba |
Silicon PNP Transistor . Low Leakage Current : ICEV=-50nA(Max.), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : v CE(sat)=-0.4V(Max.) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ Vcb=-5V |
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Desde 2024. D4U Semiconductor.
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