Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2N3713 |
| Part Number | 2N3713 |
| Manufacturer | Central Semiconductor |
| Title | SILICON NPN TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RA. |
| Features | 2N3716) 80 VCE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) VCE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) VBE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) VBE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) VBE(ON) VCE=2.0V, IC=3.0A hFE VCE=2.0V, IC=1.0A (2N3713, 2N3714) 40 hFE VCE=2.0V, IC=1.0A (2N3715, 2N3716) 50 hFE VCE=2.0V, IC=3.0A (2N3713, 2N3714) 15 hFE VCE=2.0V, IC=3.0A (2N3715, 2N3716) 30 fT . |
2N3713 |
| Part Number | 2N3713 |
| Manufacturer | Seme LAB |
| Title | Bipolar NPN Device |
| Description | 2N3713 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma. |
| Features | ackage dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 31-Jul-02 Datasheet pdf . |
2N3713 |
| Part Number | 2N3713 |
| Manufacturer | Comset Semiconductor |
| Title | (2N3713 - 2N3716) EPITAXIAL-BASE TRANSISTORS |
| Description | NPN 2N3713 – 2N3714 – 2N3715 – 2N3716 EPITAXIAL-BASE TRANSISTORS The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791. |
| Features | 3716 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3713 2N3715 IC=200 mA, IB=0 (*) 2N3714 2N3716 2N3713 2N3715 IC=200 mA, IB=0 (*) 2N3714 2N3716 2N3713 VCE=30 V, IB=0 2N3715 2N3714 VCE=40 V, IB=0 2N3716 2N3713 VCE=80 V, VEB=-1.5 V 2N3715 2N3714 VCE=100 V, VEB=-1.5 V 2N3716 VCE=60 V, VEB=-1.5 V 2N3713 TC = 150°C 2N. |
2N3713 |
| Part Number | 2N3713 |
| Manufacturer | Toshiba |
| Title | GENERAL PURPOSE POWER TRANSISTOR |
| Description | SILICON NPN TRIPLE DIFFUSED TYPE 2N3713 GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIVES APPLICATIONS. FEATURES: . High Gain at High Current . Low Saturation Voltage : VcE(sat) =1 - ov (Max.) @ IC=5A, Ib=0.5A . Excellent Area of Safe Operatings MAXIMUM RATINGS (•T. |
| Features |
. High Gain at High Current . Low Saturation Voltage : VcE(sat) =1 - ov (Max.)
@ IC=5A, Ib=0.5A
. Excellent Area of Safe Operatings
MAXIMUM RATINGS ( •Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Thermal Resistance Junction Temperature ' Storage Temperature Range SYMBOL VcBO VCEO. |
2N3713 |
| Part Number | 2N3713 |
| Manufacturer | Motorola |
| Title | NPN silicon power transistors |
| Description | 2N3713 thru 2N3716 (SILICON) CASE 11 (TO-3) NPN silicon power transistors for medium-speed switching and amplifier applications. Complement to PNP types 2N3789 thru 2N3792. MAXIMUM RATINGS Rating C/')llector-Base Voltage Collector-Emitter Voltage f--- Emitter-Base Voltage Collector Current Base C. |
| Features | limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must rail within the applicable Safe Area to avoid causing a collectoremitter short. (Duty cycle of the excursions make no signifi- cant change in these safe areas.) To insure operation below the maximum T,,, the power-temperature derating curve must be observed for both steady state and. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3710 |
Micro Electronics |
NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS |
|
| 2 | 2N3711 |
Micro Electronics |
NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS |
|
| 3 | 2N3712 |
Motorola |
NPN Transistor |
|
| 4 | 2N3714 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2N3714 |
Toshiba |
GENERAL PURPOSE POWER TRANSISTOR |
|
| 6 | 2N3714 |
Central Semiconductor |
SILICON NPN TRANSISTORS |
|
| 7 | 2N3714 |
Motorola |
NPN silicon power transistors |
|
| 8 | 2N3714 |
NTE |
Silicon NPN Transistor |
|
| 9 | 2N3714 |
Comset Semiconductor |
(2N3713 - 2N3716) EPITAXIAL-BASE TRANSISTORS |
|
| 10 | 2N3715 |
Motorola Inc |
10 AMPERE POWER TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
|