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2N3714 Silicon NPN Power Transistor Datasheet


2N3714

Inchange Semiconductor
2N3714
Part Number 2N3714
Manufacturer Inchange Semiconductor
Title Bipolar Junction Transistor, NPN Type, TO-3
Description ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device p...
Features Voltage IC=200mA; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 2V hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Curr...

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Distributor Distributor
Quest Components
Stock 15 In stock
Price
4 units: 7.5 USD
2 units: 10 USD
1 units: 15 USD
BuyNow BuyNow BuyNow (Manufacturer a Motorola Semiconductor Products 2N3714)



2N3714

Comset Semiconductor
2N3714
Part Number 2N3714
Manufacturer Comset Semiconductor
Title (2N3713 - 2N3716) EPITAXIAL-BASE TRANSISTORS
Description NPN 2N3713 – 2N3714 – 2N3715 – 2N3716 EPITAXIAL-BASE TRANSISTORS The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transi.
Features 3716 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3713 2N3715 IC=200 mA, IB=0 (*) 2N3714 2N3716 2N3713 2N3715 IC=200 mA, IB=0 (*) 2N3714 2N3716 2N3713 VCE=30 V, IB=0 2N3715 2N3714 VCE=40 V, IB=0 2N3716 2N3713 VCE=8.

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2N3714

NTE
2N3714
Part Number 2N3714
Manufacturer NTE
Title Silicon NPN Transistor
Description The 2N3714 is a silicon NPN transistor in a TO−3 type package designed for medium speed switching and amplifier applications. Features: D Gain R.
Features D Gain Ranged Specified at 1A and 3A D Low Collector−Emitter Saturation Voltage: VCE9sat) = 0.5V (Typ) @ IC = 5A, IB = 500mA D Excellent Safe Operating Areas Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

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2N3714

Toshiba
2N3714
Part Number 2N3714
Manufacturer Toshiba
Title GENERAL PURPOSE POWER TRANSISTOR
Description SILICON NPN TRIPLE DIFFUSED TYPE 2N3714 GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIVES APPLICATIONS. FEATURES .
Features . High Gain at High Current . Low Saturation Voltage: VcE(sat)=l-OV (Max.) @ IC=5A, I B=0.5A . Excellent Area of Safe Operatings MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation .

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2N3714

Central Semiconductor
2N3714
Part Number 2N3714
Manufacturer Central Semiconductor
Title SILICON NPN TRANSISTORS
Description The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounte.
Features .

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2N3714

Motorola
2N3714
Part Number 2N3714
Manufacturer Motorola
Title NPN silicon power transistors
Description 2N3713 thru 2N3716 (SILICON) CASE 11 (TO-3) NPN silicon power transistors for medium-speed switching and amplifier applications. Complement to P.
Features .

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