Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2N3791 |
| Part Number | 2N3791 |
| Manufacturer | Semelab Plc |
| Title | Bipolar PNP Device |
| Description | 2N3791 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (. |
| Features | ons, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk w w . |
2N3791 |
| Part Number | 2N3791 |
| Manufacturer | Comset Semiconductor |
| Title | EPITAXIAL-BASE TRANSISTORS |
| Description | PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The 2N3713, 2N3714, 2N3715 and 2N3716 complementary NP. |
| Features | 2N3792 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 VCE=-30 V, IB=0 2N3791 2N3790 VCE=-40 V, IB=0 2N3792 2N3789 VCE=-80 V, VEB=1.5 V 2N3791 2N3790 VCE=-100 V, VEB=1.5 V 2N3792 VCE=-60 V, VEB=1.5 V 2N3789 TC = 1. |
2N3791 |
| Part Number | 2N3791 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistors |
| Description | ·With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Product Specification 2N3791 2N3792 Fig.1 simplified outline (TO-3) and symbol AB. |
| Features | . |
2N3791 |
| Part Number | 2N3791 |
| Manufacturer | Microsemi |
| Title | PNP HIGH POWER SILICON TRANSISTOR |
| Description | TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 Devices 2N3791 2N3792 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipat. |
| Features | . |
2N3791 |
| Part Number | 2N3791 |
| Manufacturer | VPT |
| Title | PNP High Power Silicon Transistor |
| Description | at any time, without notice. VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherw. |
| Features |
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/379 • TO-3 (TO-204AA) Package • Designed for High Power, Medium Speed Switching and Amplifier Applications Rev. V3 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Base Cutoff Current Emitter -. |
2N3791 |
| Part Number | 2N3791 |
| Manufacturer | Toshiba |
| Title | SILICON PNP Transistor |
| Description | : SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS FEATURES . High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, I C=-3A . Low Saturation Voltage: VcE(sat)=-1.0V (Max.) @ IC=-5A, Ib=-0.5A Unit in mm 025.OUAX. MAXIMUM RATINGS (Ta=25°C. |
| Features | . High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, I C=-3A . Low Saturation Voltage: VcE(sat)=-1.0V (Max.) @ IC=-5A, Ib=-0.5A Unit in mm 025.OUAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation (Tc=25°C)Derate Linearly . |
2N3791 |
| Part Number | 2N3791 |
| Manufacturer | Motorola |
| Title | PNP silicon power transistors |
| Description | 2N3789 thru 2N3792 (SILICON) CASEll~. (TO-3) ~ PNP silicon power transistors for medium-speed switching and amplifier applications. Complement to NPN type 2N3713 thru 2N3716. Collector connected to case MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Collector-BaSe Voltage C. |
| Features |
dc, VBE = -1. 5 Vdc)
(VCE = 60 Vdc, VBE = -1. 5 Vdc, TC = 150°C) (VCE = 80 Vdc, VBE = -1.5 Vdc, TC = 150°C)
llN3789, llN3791 llN3790, llN37911 2N3789, llN3791 2N3790, llN37911
Emitter-Base Cutoff Current (VEB = 7 Vdc)
DC Current Gain · (IC = 1 Adc, VCE = II Vdc) (Ic = 3 Adc, VCE '" II Vdc) llN3789, llN3790 llN3791, llN3792 llN3789, llN3790 llN3791, llN37911 Collector-Emitter Saturation Voltage. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N379 |
Motorola |
PNP Transistor |
|
| 2 | 2N3790 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2N3790 |
Central Semiconductor |
PNP POWER TRANSISTORS |
|
| 4 | 2N3790 |
Toshiba |
Silicon PNP Transistor |
|
| 5 | 2N3790 |
Motorola |
PNP silicon power transistors |
|
| 6 | 2N3790 |
Comset Semiconductor |
EPITAXIAL-BASE TRANSISTORS |
|
| 7 | 2N3792 |
Seme LAB |
PNP SILICON EPITAXIAL BASE POWER TANSISTORS |
|
| 8 | 2N3792 |
VPT |
PNP High Power Silicon Transistor |
|
| 9 | 2N3792 |
Central Semiconductor |
PNP POWER TRANSISTORS |
|
| 10 | 2N3792 |
Microsemi |
PNP HIGH POWER SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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