Busque con el número de pieza junto con el fabricante o la descripción
2N3791 |
Click to view a larger image
| Part Number | 2N3791 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS FEATURES . High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, I C=-3A . Low Saturatio... |
| Features |
. High Gain and Excellent hpg Linearity: hFE=30 (Min.) @ V CE=-2V, I C=-3A
. Low Saturation Voltage: VcE(sat)=-1.0V (Max.)
@ IC=-5A, Ib=-0.5A
Unit in mm
025.OUAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Peak
Base Current
Collector Power Dissipation (Tc=25°C)Derate Linearly above 25 C
Junction Temperature
* Storage Temperature Range
VcBO VCEO VEBO ic I CM IB
Ti Lstg
-60 -60
-7 -10 -15
-4 150 0.86 W/°C 200 -65 ^200
1. BASE 2. EMITTER
COLLECTOR (CASE)
EIAJ TOSHIBA
T0... |
| Document |
 2N3791 Data Sheet
PDF 85.53KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N379 |
Motorola |
PNP Transistor |
|
| 2 | 2N3790 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2N3790 |
Central Semiconductor |
PNP POWER TRANSISTORS |
|
| 4 | 2N3790 |
Toshiba |
Silicon PNP Transistor |
|
| 5 | 2N3790 |
Motorola |
PNP silicon power transistors |
|
| 6 | 2N3790 |
Comset Semiconductor |
EPITAXIAL-BASE TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
|