Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2N3055 |
| Part Number | 2N3055 |
| Manufacturer | Aeroflex |
| Title | NPN Power Silicon Transistor |
| Description | NPN Power Silicon Transistor 2N3055 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 • TO-3 (TO-204AA) Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Base Current Collector Current Total Power Dissipation @ TA. |
| Features |
• Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 • TO-3 (TO-204AA) Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Base Current Collector Current Total Power Dissipation @ TA = 25 °C (1) Operating & Storage Temperature Range 1) Derate linearly @ 34.2 mW / °C for TA = 25 °C Thermal Characteristics Characteristics Ther. |
2N3055 |
| Part Number | 2N3055 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | . |
| Features | . |
2N3055 |
| Part Number | 2N3055 |
| Manufacturer | NTE |
| Title | Silicon NPN Power Transistor |
| Description | The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 − 70 @ IC = 4A D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximu. |
| Features | D DC Current Gain: hFE = 20 − 70 @ IC = 4A D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . .. |
2N3055 |
| Part Number | 2N3055 |
| Manufacturer | UTC |
| Title | SILICON NPN TRANSISTORS |
| Description | The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ORDERING INFORMATION Ordering Number 2N3055L-T30-Y Note: Pin Assignment: E: Emitter B: Base C: Case Package TO-3 . |
| Features | e PD TJ 115 W 200 C Storage Temperature TSTG -65 to 200 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collecto. |
2N3055 |
| Part Number | 2N3055 |
| Manufacturer | STMicroelectronics |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications. Order code 2N3055 MJ2955 Table 1. Device summary Marking Package 2N3055 MJ2955 TO-3 Packaging Tray November 2013 This is information on a product i. |
| Features |
• Low collector-emitter saturation voltage • Complementary NPN - PNP transistors Applications • General purpose • Audio amplifier Description The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications. Order code 2N3055 MJ2955 Table 1. Device summary Marking Package 2N3055 MJ2955 TO-3 Packaging Tray Novemb. |
2N3055 |
| Part Number | 2N3055 |
| Manufacturer | ON Semiconductor |
| Title | Complementary Silicon Power Transistors |
| Description | 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1. |
| Features |
• DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc • Excellent Safe Operating Area • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation. |
2N3055 |
| Part Number | 2N3055 |
| Manufacturer | CENTRAL SEMICONDUCTOR |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: . |
| Features | B=400mA VCE(SAT) IC=10A, IB=3.3A VBE(ON) VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A 20 hFE VCE=4.0V, IC=10A 5.0 hfe VCE=4.0V, IC=1.0A, f=1.0kHz 15 fT VCE=10V, IC=0.5A, f=1.0MHz 2.5 fhfe VCE=4.0V, IC=1.0A, f=1.0kHz 10 Is/b VCE=40V, t=1.0s 2.87 MAX 1.0 5.0 0.7 5.0 1.1 3.0 1.5 70 120 UNITS V V V V A A W °C °C/W UNITS mA mA mA mA V V V V V MHz kHz A R1 (26-July 2013) 2N3055 NPN MJ2955 . |
2N3055 |
| Part Number | 2N3055 |
| Manufacturer | Microsemi Corporation |
| Title | NPN POWER SILICON TRANSISTOR |
| Description | TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/407 Devices 2N3055 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT T. |
| Features | = 100Ω Collector-Emitter Breakdown Voltage VBE = -1.5 Vdc, IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Emitter Cutoff Current VBE = -1.5 Vdc; VCE = 100 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3055 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characterist. |
2N3055 |
| Part Number | 2N3055 |
| Manufacturer | Multicomp |
| Title | Complementary Power Transistors |
| Description | 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Emitte. |
| Features |
• Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions :. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3053 |
Seme LAB |
MEDIUM POWER SILICON NPN PLANAR TRANSISTOR |
|
| 2 | 2N3053 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2N3053 |
Central |
Small Signal Transistors |
|
| 4 | 2N3053 |
CDIL |
NPN SILICON PLANAR TRANSISTOR |
|
| 5 | 2N3053 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 6 | 2N3053 |
TT |
MEDIUM POWER SILICON NPN TRANSISTOR |
|
| 7 | 2N3053A |
CDIL |
NPN SILICON PLANAR TRANSISTOR |
|
| 8 | 2N3053A |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 9 | 2N3054 |
Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR |
|
| 10 | 2N3054 |
Seme LAB |
Bipolar NPN Device |
|
Desde 2024. D4U Semiconductor.
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