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2N3906 |
Part Number | 2N3906 |
Manufacturer | NXP |
Title | PNP switching transistor |
Description | PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904. PINNING PIN 1 2 3 collector base emitter 2N3906 DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum R. |
Features |
• Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial applications. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904. PINNING PIN 1 2 3 collector base emitter 2N3906 DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accorda. |
2N3906 |
Part Number | 2N3906 |
Manufacturer | Fairchild Semiconductor |
Title | PNP Transistor |
Description | This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 EBC TO-92 MMBT3906 C SOT-23 Mark:2A E B PZT3906 C SOT-223 E C B Ordering Information Part Number 2N3906BU 2N3906TA 2N3906TAR 2N3906TF 2N3906TFR MMBT3906 PZT390. |
Features | function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ,. |
2N3906 |
Part Number | 2N3906 |
Manufacturer | NTE |
Title | Silicon PNP Transistor |
Description | 2N3905 & 2N3906 Silicon PNP Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . |
Features | . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . .. |
2N3906 |
Part Number | 2N3906 |
Manufacturer | Micro Commercial Components |
Title | PNP Transistor |
Description | 2N3906 Features • Halogen Free Available Upon Request By Adding Suffix "-HF" • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temper. |
Features |
• Halogen Free Available Upon Request By Adding Suffix "-HF" • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 208℃/W Junction to Ambien. |
2N3906 |
Part Number | 2N3906 |
Manufacturer | UTC |
Title | PNP EPITAXIAL PLANAR TRANSISTOR |
Description | UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC 2N3904 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - 2N3906G-AB3-R SOT-89 2N3906L-T92-B 2N3. |
Features | * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC 2N3904 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - 2N3906G-AB3-R SOT-89 2N3906L-T92-B 2N3906G-T92-B TO-92 2N3906L-T92-K 2N3906G-T92-K TO-92 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE EBC EBC Packing Tape Reel Tape Box Bulk MARKING SOT-89 TO-92 www.unison. |
2N3906 |
Part Number | 2N3906 |
Manufacturer | AUK corp |
Title | PNP Silicon Transistor |
Description | • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3904 Ordering Information Type NO. 2N3906 Marking 2N3906 Package Code T0-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4. |
Features |
• Low collector saturation voltage • Collector output capacitance • Complementary pair with 2N3904 Ordering Information Type NO. 2N3906 Marking 2N3906 Package Code T0-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector 1.20±0.1 0.38 KST-9011-000 1 2N3906 Absolute maxim. |
2N3906 |
Part Number | 2N3906 |
Manufacturer | KEC |
Title | EPITAXIAL PLANAR PNP TRANSISTOR |
Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitanc. |
Features | Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. Complementary to 2N3904. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curren. |
2N3906 |
Part Number | 2N3906 |
Manufacturer | Motorola |
Title | Transistors |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3905/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Tot. |
Features | . |
2N3906 |
Part Number | 2N3906 |
Manufacturer | ON Semiconductor |
Title | PNP General-Purpose Amplifier |
Description | 2N3906 General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO I. |
Features |
• Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 40 40 5.0 200 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Power Dissipation @ TA = 60°C PD 250 mW Total Device Dissipation @ TC = 25°C P. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N3902 |
INCHANGE |
NPN Transistor | |
2 | 2N3902 |
Multicomp |
Bipolar Transistor | |
3 | 2N3902 |
Microsemi |
NPN HIGH POWER SILICON TRANSISTOR | |
4 | 2N3902 |
Seme LAB |
Bipolar NPN Device | |
5 | 2N3902 |
Motorola |
HIGH VOLTAGE NPN SILICON TRANSISTORS | |
6 | 2N3902 |
MA-COM |
NPN High Power Silicon Transistors | |
7 | 2N3903 |
ON Semiconductor |
NPN Transistor | |
8 | 2N3903 |
Semtech Corporation |
NPN Silicon Transistor | |
9 | 2N3903 |
Fairchild Semiconductor |
NPN Amplifier | |
10 | 2N3903 |
Toshiba |
Silicon NPN Transistor |