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2N3905 Transistors Datasheet


2N3905

Motorola
2N3905
2N3905
Part Number 2N3905
Manufacturer Motorola
Title 트랜지스터 - 양극(BJT) - 단일 PNP 40V 200mA 200MHz 625mW 스루홀 TO-92
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3905/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MA...
Features ge (IC = 10 mAdc, IE = 0) Emitter
  – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. v v2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. ...

Document Datasheet 2N3905 datasheet pdf (142.44KB)
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2N3905

NTE
2N3905
Part Number 2N3905
Manufacturer NTE
Title Silicon PNP Transistor
Description 2N3905 & 2N3906 Silicon PNP Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . ..
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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2N3905

Toshiba
2N3905
Part Number 2N3905
Manufacturer Toshiba
Title Silicon PNP Transistor
Description : ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N3905 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm FEATURES . Low .
Features . Low Leakage Current : ICEV= -50nA(Max.), T-BEV= 50nA(Max. @ V C E=-30V, Vbe=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V CE ( sat) =-0.4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ VCB =-5V . Complementary to 2N3903 J EDEC 1. EMI.

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2N3905

Central Semiconductor
2N3905
Part Number 2N3905
Manufacturer Central Semiconductor
Title SILICON PNP TRANSISTORS
Description The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. .
Features A hfe VCE=10V, IC=1.0mA, f=1.0kHz fT VCE=20V, IC=10mA, f=100MHz Cob VCB=5.0V, IE=0, f=100kHz Cib VEB=0.5V, IC=0, f=100kHz NF VCE=5.0V, IC=100μA, RS=1.0kΩ f=10Hz to 15.7kHz ton VCC=3.0V, VBE(OFF)=0.5V, IC=10mA IB1=1.0mA toff VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 2N3905 MIN MAX - 50 40 40 5.0 - 0.2.

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2N3905

Fairchild Semiconductor
2N3905
Part Number 2N3905
Manufacturer Fairchild Semiconductor
Title PNP General Purpose Amplifier
Description 2N3905 Discrete POWER & Signal Technologies 2N3905 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpo.
Features Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3905 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N3905 PNP General Purpose Amplifier (continued) Electrical Characteristics .

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