Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2N3789 |
| Part Number | 2N3789 |
| Manufacturer | Central Semiconductor |
| Title | PNP POWER TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Colle. |
| Features | . |
2N3789 |
| Part Number | 2N3789 |
| Manufacturer | Seme LAB |
| Title | Bipolar PNP Device |
| Description | 2N3789 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma. |
| Features | ackage dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 31-Jul-02 Datasheet pdf . |
2N3789 |
| Part Number | 2N3789 |
| Manufacturer | Comset Semiconductor |
| Title | EPITAXIAL-BASE TRANSISTORS |
| Description | PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The 2N3713, 2N3714, 2N3715 and 2N3716 complementary NP. |
| Features | 2N3792 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage Test Condition(s) 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 VCE=-30 V, IB=0 2N3791 2N3790 VCE=-40 V, IB=0 2N3792 2N3789 VCE=-80 V, VEB=1.5 V 2N3791 2N3790 VCE=-100 V, VEB=1.5 V 2N3792 VCE=-60 V, VEB=1.5 V 2N3789 TC = 1. |
2N3789 |
| Part Number | 2N3789 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO. |
| Features | ing Voltage IC=-200mA; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=- 0.4A VBE(ON)-1 Base-Emitter On Voltage IC=-5A; VCE=-2V VBE(ON)-2 Base-Emitter On Voltage IC=-10A; VCE=-4V hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -3A; VCE= -2V fT Current Gain-Bandwidth Product *:Pulse test:Pulse width=300us. |
2N3789 |
| Part Number | 2N3789 |
| Manufacturer | Toshiba |
| Title | SILICON PNP Transistor |
| Description | SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS. FEATURES . High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max.) @ Ic=-4A, I B=-0.4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTE. |
| Features |
. High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A
. Low Saturation Voltage: VCE(sat)=-1.0V (Max.)
@ Ic=-4A, I B=-0.4A
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
a Collector-Base Voltage
* • Collector-Emitter Voltage 38 Emitter-Base Voltage •* Collector Current DC Peak 38 Base Current Collector Power Dissipation JS (Tc=25°C) Derate Linearly above 25 °C 38. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N378 |
Motorola |
PNP Transistor |
|
| 2 | 2N3782 |
Seme LAB |
Bipolar PNP Device |
|
| 3 | 2N3783 |
Motorola |
PNP Transistor |
|
| 4 | 2N3784 |
Motorola |
PNP Transistor |
|
| 5 | 2N3785 |
Motorola |
PNP Transistor |
|
| 6 | 2N3700 |
STMicroelectronics |
Silicon Planar Epitaxial NPN transistor |
|
| 7 | 2N3700 |
ON Semiconductor |
Low Power Transistor |
|
| 8 | 2N3700 |
Microsemi Corporation |
LOW POWER NPN SILICON TRANSISTOR |
|
| 9 | 2N3700 |
TT |
SILICON NPN TRANSISTOR |
|
| 10 | 2N3700 |
Multicomp |
Bipolar Transistor |
|
Desde 2024. D4U Semiconductor.
|